ANNA UNIVERSITY CHENNAI
EC6201 ELECTRONIC DEVICES
REGULATION - 2013
SECOND SEMESTER ECE SYLLABUS
OBJECTIVES: - To acquaint the students with the construction, theory and operation of the basic electronic devices such as PN junction diode, Bipolar and Field effect Transistors, Power control devices, LED, LCD and other Opto-electronic devices
UNIT I SEMICONDUCTOR DIODE
PN junction diode, Current equations, Diffusion and drift current densities, forward and reverse bias characteristics, Switching Characteristics.
UNIT II BIPOLAR JUNCTION
NPN -PNP -Junctions-Early effect-Current equations – Input and Output characteristics of CE, CB CC-Hybrid -Ï€ model - h-parameter model, Ebers Moll Model- Gummel Poon-model, Multi Emitter Transistor.
UNIT III FIELD EFFECT TRANSISTORS
JFETs – Drain and Transfer characteristics,-Current equations-Pinch off voltage and its significance- MOSFET- Characteristics- Threshold voltage -Channel length modulation, D-MOSFET, E-MOSFET-,Current equation - Equivalent circuit model and its parameters, FINFET,DUAL GATE MOSFET.
UNIT IV SPECIAL SEMICONDUCTOR DEVICES
Metal-Semiconductor Junction- MESFET, Schottky barrier diode-Zener diode-Varactor diode –Tunnel diode- Gallium Arsenide device, LASER diode, LDR.
UNIT V POWER DEVICES AND DISPLAY DEVICES
UJT, SCR, Diac, Triac, Power BJT- Power MOSFET- DMOS-VMOS. LED, LCD, Photo transistor, Opto Coupler, Solar cell, CCD.
TOTAL : 45 PERIODS
TEXT BOOKS
1. Donald A Neaman, “Semiconductor Physics and Devices”, Third Edition, Tata Mc GrawHill Inc. 2007.
REFERENCES:
1. Yang, “Fundamentals of Semiconductor devices”, McGraw Hill International Edition, 1978.
2. Robert Boylestad and Louis Nashelsky, “Electron Devices and Circuit Theory” Pearson Prentice Hall, 10th edition,July 2008.
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